datasheet www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. rgth80ts65 650v 40a field stop trench igbt *1 pulse width limited by t jmax. operating junction temperature t j ? 40 to +175 c storage temperature t stg ? 55 to +175 c power dissipation t c = 25c p d 234 w t c = 100c p d 117 w 160 a pulsed collector current i cp *1 ? outline v ces 650v to-247n i c(100c) 40a v ce(sat) (typ.) 1.6v p d 234w ? features ? inner circuit 1) low collector - emitter saturation voltage 2) high speed switching 3) low switching loss & soft switching 4) pb - free lead plating ; rohs compliant ? packaging specifications ? applications type packaging tube pfc reel size (mm) - ups tape width (mm) - power conditioner basic ordering unit (pcs) 450 ih packing code c11 marking rgth80ts65 ? absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit collector - emitter voltage v ces 650 v gate - emitter voltage v ges ? 30 v collector current t c = 25c i c 70 a t c = 100c i c 40 a (1)(2)(3) (1) gate (2) collector (3) emitter (1) (2) (3) 1/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? thermal resistance ? igbt electrical characteristics (at t j = 25c unless otherwise specified) v t j = 25c - 1.6 2.1 t j = 175c - 2.1 - v ce(sat) i c = 40a, v ge = 15v - ? 200 na gate - emitter thresholdvoltage v ge(th) v ce = 5v, i c = 27.6ma 4.5 5.5 6.5 v gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v - --v collector cut - off current i ces v ce = 650v, v ge = 0v --1 0 a collector - emitter breakdownvoltage bv ces i c = 10 a, v ge = 0v 650 conditions values unit min. typ. max. collector - emitter saturationvoltage unit min. typ. max. thermal resistance igbt junction - case r (j-c) - - 0.64 c/w parameter symbol values parameter symbol 2/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? igbt electrical characteristics (at t j = 25c unless otherwise specified) reverse bias safe operating area rbsoa i c = 160a, v cc = 520v full square - v p = 650v, v ge = 15v r g = 60 ? , t j = 175c - 135 - fall time t f inductive load - 59 - ns rise time t r v ge = 15v, r g = 10 ? -5 0- turn - off delay time t d(off) t j = 175c turn - on delay time t d(on) i c = 40a, v cc = 400v -3 4- - 120 - fall time t f inductive load - 47 - turn - on delay time t d(on) i c = 40a, v cc = 400v -3 4- ns rise time t r v ge = 15v, r g = 10 ? -5 0- turn - off delay time t d(off) t j = 25c nc gate - emitter charge q ge i c = 40a -2 1- gate - collector charge q gc v ge = 15v -2 9- -3 5- total gate charge q g v ce = 300v -7 9- parameter symbol conditions values unit min. typ. max. pf output capacitance c oes v ge = 0v -8 5- reverse transfer capacitance c res f = 1mhz input capacitance c ies v ce = 30v - 2210 - 3/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? electrical characteristic curves fig.2 collector current vs. case temperature collector current : i c [a] case temperature : tc [oc] fig.3 forward bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.4 reverse bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.1 power dissipation vs. case temperature power dissipation : p d [w] case temperature : tc [oc] 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 200 0 200 400 600 800 t j 175oc v ge =15v 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 t j 175oc v ge 15v 0.01 0.1 1 10 100 1000 1 10 100 1000 t c = 25oc single pulse 10 s 100 s 4/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? electrical characteristic curves fig.5 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.6 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.7 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.8 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] 0 20 40 60 80 100 120 140 160 012345 t j = 175oc v ge = 20v v ge = 15v v ge = 12v v ge = 10v v ge = 8v 0 20 40 60 80 100 120 140 160 012345 t j = 25oc v ge = 20v v ge = 15v v ge = 12v v ge = 10v v ge = 8v 0 10 20 30 40 50 60 024681 01 2 v ce = 10v t j = 25oc t j = 175oc 0 1 2 3 4 25 50 75 100 125 150 175 i c = 80a i c = 20a i c = 40a v ge = 15v 5/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? electrical characteristic curves collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] switching time [ns] collector current : i c [a] fig.12 typical switching time vs. gate resistance switching time [ns] gate resistance : r g [ ? ] 0 5 10 15 20 51 01 52 0 t j = 25oc i c = 80a i c = 20a i c = 40a 0 5 10 15 20 5 1 01 52 0 t j = 175oc i c = 80a i c = 20a i c = 40a 10 100 1000 0 1020304050607080 t f v cc =400v, v ge =15v r g =10 ? , t j =175oc inductive oad t d(off) t d(on) t r 10 100 1000 0 1 02 03 04 05 0 t f t d(off) t d(on) t r v cc =400v, i c =40a v ge =15v, t j =175oc inductive oad fig.9 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.10 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.11 typical switching time vs. collector current 6/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? electrical characteristic curves fig.13 typical switching energy losses vs. collector current switching energy losses [mj] collector current : i c [a] fig.14 typical switching energy losses vs. gate resistance switching energy losses [mj] gate resistance : r g [ ? ] fig.15 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] fig.16 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 0.01 0.1 1 10 0 1020304050607080 e off v cc =400v, v ge =15v r g =10 ? , t j =175oc inductive oad e on 1 10 100 1000 10000 0.01 0.1 1 10 100 cies f=1mhz v ge =0v t j =25oc coes cres 0.01 0.1 1 10 0 1 02 03 04 05 0 e off e on v cc =400v, i c =40a v ge =15v, t j =175oc inductive oad 0 5 10 15 0 1020304050607080 v cc =300v i c =40a t j =25oc 7/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? electrical characteristic curves 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse fig.17 igbt transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc ? t c 8/9 2015.10 - rev.c downloaded from: http:///
www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. data sheet rgth80ts65 ? inductive load switching circuit and waveform vg d.u.t. fig.18 inductive load circuit gate drive time t off t f t d(off) t d(on) t r 10% 90% v ce(sat) 10% 90% t on v ge i c v ce fig.19 inductive load waveform 9/9 2015.10 - rev.c downloaded from: http:///
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